The GW80H65 80H65 IGBT, part of our HB series, combines high-speed switching with low saturation voltage, making it an excellent choice for frequency converters.
Features
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Advanced Structure:
- Developed using a proprietary trench gate field-stop design.
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Efficiency Maximization:
- Balances conduction and switching losses.
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Safe Paralleling:
- Tight parameter distribution ensures secure parallel operation.
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Fast Recovery Diode:
- Enhances performance in antiparallel applications.
Applications
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Photovoltaic Inverters:
- Optimize energy conversion in solar power systems.
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High-Frequency Converters:
- Efficiently handle variable frequencies.
Technical Specifications
- Voltage Rating: 650 V
- Continuous Collector Current: 80 A (TC = 100 °C)
- Junction Temperature: Up to 175 °C
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