Hy1920 Mosfet New N-channel Power Transistor

HY1920 MOSFET – High-Performance N-Channel Power Transistor

The HY1920 MOSFET is a robust, high-efficiency N-Channel MOSFET, ideal for power applications requiring high current and voltage capabilities. It features a 200V drain-to-source voltage and 90A current handling, making it suitable for motor control, power supplies, and industrial switching applications.

Key Features

• Drain-to-Source Voltage (V_DS): 200V
• Continuous Drain Current (I_D): 90A
• Maximum Power Dissipation: 375W
• Low R_DS(on) for efficient switching

Learn More About HY1920 MOSFET

Explore detailed specifications and datasheets for the HY1920 MOSFET on the following site:

• HY1920 MOSFET Datasheet

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Package Includes

• 1 x HY1920 N-Channel MOSFET