IRFZ24N 17A 55V N-Channel Power MOSFET

₨72.00

Type: n-channel
Drain-to-Source Breakdown Voltage: 60 V
Gate-to-Source Voltage, max: ±20 V
Drain-Source On-State Resistance, max: 0.028 Ohm
Continuous Drain Current: 17 A
Total Gate Charge: 67 nC
Power Dissipation: 82 W
Package: TO-220AB

IRFZ24N 17A 55V N-Channel Power MOSFET
IRFZ24N 17A 55V N-Channel Power MOSFET is utilize for advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.

IRFZ24 Pin Configuration

Pin No
Pin Name

1
Gate

2
Drain

3
Source

IRFZ24 Key Features

Advanced Process Technology
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Type Designator: IRFZ24
Type of Transistor: MOSFET
Type of Control Channel: N -Channel

IRFZ24 Specification

Id (A)
Pd (W)
Vds (max)
Rds (on)
Vgs (max)

17
60
60
0.1
10

Application

Switching Applications

You can download this datasheet for IRFZ24N 17A 55V N-Channel Power MOSFET from the link given below:

Download Datasheet